参数资料
型号: FDS7296N3
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 15 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: FLMP, SO-8
文件页数: 5/7页
文件大小: 122K
代理商: FDS7296N3
FDS7296N3 Rev C(W)
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 15A
V
DS
= 10V
20V
15V
0
400
800
1200
1600
2000
0
5
15
20
25
30
V
DS
, D10
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.01
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
10
100
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 85
o
C/W
T
A
= 25
o
C
10ms
1ms
100μs
10s
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 85°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 85 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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