参数资料
型号: FDS8638
厂商: Fairchild Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET N-CH 40V 18A 8-SOIC
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 18A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.3 毫欧 @ 18A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 86nC @ 10V
输入电容 (Ciss) @ Vds: 5680pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: FDS8638DKR
Typical Characteristics T J = 25 °C unless otherwise noted
100
4.0
80
60
40
V GS = 10 V
V GS = 4.5 V
V GS = 4 V
V GS = 3.5 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3.5
3.0
2.5
2.0
1.5
V GS = 3 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 3.5 V
V GS = 4 V
20
0
V GS = 3 V
1.0
0.5
V GS = 4.5 V
V GS = 10 V
0.0
0.5
1.0
1.5
2.0
0
20
40
60
80
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
20
1.4
I D = 18 A
V GS = 10 V
I D = 18 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
15
1.2
10
1.0
T J = 125 o C
0.8
5
T J = 25 o C
0.6
-75
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
100
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
V GS = 0 V
80
V DS = 5 V
10
T J = 150 o C
60
40
T J = 150 o C
1
T J = 25 o C
20
T J = 25 o C
0.1
T J = -55 o C
T J = -55 o C
0
0.01
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
3
www.fairchildsemi.com
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