参数资料
型号: FDS8876
厂商: Fairchild Semiconductor
文件页数: 3/12页
文件大小: 0K
描述: MOSFET N-CH 30V 12.5A 8SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 2,500
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.2 毫欧 @ 12.5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 36nC @ 10V
输入电容 (Ciss) @ Vds: 1650pF @ 15V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
8
63
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 15V, I D = 12.5A
V GS = 10V, R GS = 10 ?
-
-
-
-
34
53
19
-
-
-
-
108
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 12.5A
I SD = 2.1A
I SD = 12.5A, dI SD /dt = 100A/ μ s
I SD = 12.5A, dI SD /dt = 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
29
15
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 1mH, I AS = 14.5A, V DD = 30V, V GS = 10V.
2: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
a) 50°C/W when mounted on a 1in 2 pad of 2 oz copper.
b) 125°C/W when mounted on a minimum pad.
?2007 Fairchild Semiconductor Corporation
FDS8876 Rev. B
3
www.fairchildsemi.com
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