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| 型号： | FDS9431A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.5A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 130 毫欧 @ 3.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 405pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS9431ADKR |
Electrical Characteristics
T A = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
D BV DSS
D T J
I DSS
I GSSF
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
V GS = 0 V, I D = -250 m A
I D = -250 m A,Referenced to 25 ° C
V DS = -16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
-20
-28
-1
100
V
mV/ ° C
m A
nA
Forward
I GSSR
Gate-Body Leakage Current,
V GS = -8 V, V DS = 0 V
-100
nA
Reverse
On Characteristics
(Note 2)
V GS(th)
D V GS(th)
D T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = -250 m A
I D = -250 m A,Referenced to 25 ° C
V GS = -4.5 V, I D = -3.5 A
V GS = -2.5 V, I D = -3.0 A
V GS = -4.5 V, I D = -3.5 A
T J =125 ° C
-0.4
-0.6
2
0.110
0.140
0.155
-1
0.130
0.180
0.220
V
mV/ ° C
W
W
W
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = -4.5 V, V DS =-5 V
V DS = -5 V, I D = -3.5 A
-10
6.5
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1.0 MHz
405
170
45
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -5 V, I D = -1 A,
V GS = -4.5 V, R GEN = 6 W
V DS = -5 V, I D = -3.5 A,
V GS = -4.5 V
6.5
20
31
21
6
0.8
1.3
13
35
50
35
8.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-2.1
A
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = -2.1 A
(Note 2)
-0.7
-1.2
V
Voltage
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50 ° C/W when
mounted on a 1 in 2
pad of 2 oz. copper.
b) 105 ° C/W when
mounted on a 0.04 in 2
pad of 2 oz. copper.
c) 125 ° C/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDS9431A Rev. A2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS9431A_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified MOSFET |
| FDS9431A_F085 | 功能描述:MOSFET SO8 SINGLE PCH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9435A | 功能描述:MOSFET SO-8 SGL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9435A_Q | 功能描述:MOSFET SO-8 SGL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9435A-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS9435A Series 30 V 50 mOhm P-Channel PowerTrench Mosfet - SOIC-8 |
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