参数资料
型号: FDS9926A
厂商: Fairchild Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH DUAL 20V 6.5A 8SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 30 毫欧 @ 6.5A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 9nC @ 4.5V
输入电容 (Ciss) @ Vds: 650pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FDS9926ADKR
July 2003
FDS9926A
Dual N-Channel 2.5V Specified PowerTrench ? MOSFET
General Description
Features
These N-Channel 2.5V specified MOSFETs use
6.5 A, 20 V.
R DS(ON) = 30 m ? @ V GS = 4.5 V
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
Applications
? Battery protection
? Load switch
? Power management
R DS(ON) = 43 m ? @ V GS = 2.5 V.
? Optimized for use in battery protection circuits
? Low gate charge
5
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
6
7
8
Q1
Q2
3
2
1
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
20
± 10
Units
V
I D
Drain Current
– Continuous
(Note 1a)
6.5
A
– Pulsed
20
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
Package Marking and Ordering Information
Device Marking
FDS9926A
Device
FDS9926A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2003 Fairchild Semiconductor Corp.
FDS9926A Rev E (W)
相关PDF资料
PDF描述
FDS9933A MOSFET P-CH DUAL 20V 3.8A 8SOIC
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FDS9934C MOSFET N/P-CH DUAL 20V 8SOIC
FDS9945 MOSFET N-CH 60V 3.5A SO-8
FDS9953A MOSFET P-CH DUAL 30V 2.9A 8SOIC
相关代理商/技术参数
参数描述
FDS9926A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8
FDS9926A_03 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDS9926A_Q 功能描述:MOSFET SO-8 SGL N-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS9926A-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS9926A Series 20 V 30 mOhm Dual N-Channel PowerTrench Mosfet - SOIC-8
FDS9933 功能描述:MOSFET Dl P-Ch 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube