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| 型号： | FDS9945 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 3.5A SO-8 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 420pF @ 30V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS9945DKR |
February 2001
FDS9945
60V N-Channel PowerTrench ? MOSFET
General Description
Features
These N Channel Logic Level MOSFET have been
designed specifically to improve the overall efficiency of
? 3.5 A, 60 V.
R DS(ON) = 0.100 ? @ V GS = 10 V
R DS(ON) = 0.200 ? @ V GS = 4.5V
DC/DC converters using either synchronous or
conventional switching PWM controllers.
The MOSFET feature faster switching and lower gate
charge than other MOSFET with comparable RDS(on)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
? Optimized for use in switching DC/DC converters
with PWM controllers
? Very fast switching
? Low gate charge.
D D2
D D1
D D1
D D2
5
6
Q1
4
3
7
2
SO-8
Pin 1 SO-8
G1
S1 G
G2 S
S2 S
S
8
Q2
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
3.5
A
– Pulsed
10
P D
Power Dissipation for Single Operation
(Note 1a)
2
W
(Note 1b)
(Note 1c)
1.6
1.0
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +175
° C
Thermal Characteristics
R θ JA
R θ JA
R θ J C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
78 (steady state), 50 (10 sec)
135
40
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS9945
Device
FDS9945
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDS9945 Rev B(W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS9953A | MOSFET P-CH DUAL 30V 2.9A 8SOIC |
| FDS9958_F085 | MOSFET P-CH DUAL 60A 8-SOIC |
| FDS9958 | MOSFET P-CH 60V DUAL SO-8 |
| FDSS2407 | MOSFET N-CH 62V 3.3A 8-SOIC |
| FDT3612 | MOSFET N-CH 100V 3.7A SOT-223 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CHANNEL MOSFET, 60V, SOIC |
| FDS9945_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9945-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS9945 Series 60 V 100 mOhm N-Channel PowerTrench Mosfet- SOIC-8 |
| FDS9953A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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