参数资料
型号: FDS9958_F085
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET P-CH DUAL 60A 8-SOIC
标准包装: 2,500
系列: PowerTrench®
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 2.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 105毫欧 @ 2.9A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 23nC @ 10V
输入电容 (Ciss) @ Vds: 1020pF @ 30V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
November 2008
FDS9958 _F085
Dual P-Channel PowerTrench ? MOSFET
-60V, -2.9A, 105m ?
Features
Max r DS(on) =105m ? at V GS = -10V, I D = -2.9A
Max r DS(on) =135m ? at V GS = -4.5V, I D = -2.5A
Qualified to AEC Q101
RoHS Compliant
General Description
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor ’s advanced PowerTrench ?
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D1
D2
D2
5
4
G2
D1
D2
6
Q2
3
S2
Pin 1
S1
G1
S2
G2
D1
D1
7
8
Q1
2
1
G1
S1
SO-8
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V DS
V GS
I D
E AS
P D
T J , T STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Dual Operation
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
-60
±20
-2.9
-12
54
2
1.6
0.9
-55 to +150
V
V
A
mJ
W
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
40
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS9958
Device
FDS9958_F085
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
?200 8 Fairchild Semiconductor Corporation
FDS 9958_F085 Rev. A
1
www.fairchildsemi.com
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