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| 型号： | FDT3N40TF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 2A SOT-223 |
| 标准包装： | 4,000 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
April 2013
FDT3N40
N-Channel UniFET TM MOSFET
400 V, 2.0 A, 3.4
Features
? R DS(on) = 3.4 ? (Max.) @ V GS = 10 V , I D = 1.0 A
? Low G ate C harge ( T yp . 4.5 nC)
? Low Crss ( T yp . 3.7 pF)
? 100% A valanche T ested
Applications
? LCD/LED TV
? Lighting
? Uninterruptible Power Supply
D
S
Description
UniFET TM MOSFET is Fairchild Semiconductor ? ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
G
Absolute Maximum Ratings
SOT-223
Symbol
V DSS
Drain-Source Voltage
Parameter
FDT3N40
400
Unit
V
I D
Drain Current
- Continuous (T C = 25 ? C)
- Continuous (T C = 100 ? C)
2.0
1.2
*
*
A
A
I DM
Drain Current
- Pulsed
(Note 1)
8.0
*
A
V GSS
Gate-Source voltage
? 30
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
46
2
0.2
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ? C)
- Derate above 25 ? C
2
0.02
W
W/ ? C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
? C
? C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDT3N40
Unit
R ? JA
*
Thermal Resistance, Case-to-Sink Typ.
60
? C/W
* Surface Mounted on JESD51-3 Board, T<0.1sec.
?200 9 Fairchild Semiconductor Corporation
FDT3N40 Rev. C0
1
www.fairchildsemi.com
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