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| 型号： | FDT439N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.3A SOT-223 |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 6.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 500pF @ 15V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDT439NDKR |
June 1999
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
Features
This N-Channel Enhancement mode field effect transistor
is produced using Fairchild Semiconductor's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-
state resistance, and provide superior switching
performance. These products are well suited to low
voltage, low current applications such as notebook
computer power management, battery powered
circuits, and DC motor control.
Applications
?
DC/DC converter
?
Load switch
?
Motor driving
?
?
?
6.3 A, 30 V. R DS(on) = 0.045 ? @ V GS = 4.5 V
R DS(on) = 0.058 ? @ V GS = 2.5 V
Fast switching speed.
High power and current handling capabitlity in a
widely used surface mount package.
D
S
D
D
S
D
SOT-223
G
D
G
D
S
SOT-223 *
(J23Z)
G
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
FDT439N
30
± 8
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
6.3
A
- Pulsed
20
P D
Power Dissipation for Single Operation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDT439N
Device
FDT439N
Reel Size
13 ’’
Tape Width
12mm
Quantity
2500 units
? 1999 Fairchild Semiconductor Corporation
FDT439N, Rev. C
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT439N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT439N_Q | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT457N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT457NJ23Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
| FDT458P | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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