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| 型号： | FDT439N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.3A SOT-223 |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 6.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 500pF @ 15V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDT439NDKR |
Electrical Characteristics
T A = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
30
40
V
mV/ ° C
? T J
Coefficient
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V DS = 24 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
1
100
-100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
Gate Threshold Voltage
Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
0.4
0.67
-2.2
1
V
mV/ ° C
? T J
Temperature Coefficient
R DS(on)
Static Drain-Source
On-Resistance
V GS = 4.5 V, I D = 6.3 A
V GS = 4.5 V, I D = 6.3 A, T J =125 ° C
0.038
0.055
0.045
0.072
?
V GS = 2.5 V, I D = 5.5A
0.048
0.058
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 6.3 A
10
17
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
500
185
43
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 15 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
V DS = 15 V, I D = 6.3 A,
V GS = 4.5 V,
6
10
30
10
10.7
0.9
3.7
12
18
48
18
15
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
2.5
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 2.5 A
(Note 2)
0.8
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 42 ° C/W when
mounted on a 1 in 2
pad of 2 oz. copper.
b) 95 ° C/W when
mounted on a 0.066 in 2
pad of 2 oz. copper.
c) 110 ° C/W when
mounted on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDT439N, Rev. C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT439N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT439N_Q | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT457N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT457NJ23Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
| FDT458P | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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