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参数资料
| 型号： | FDT3N40TF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 2A SOT-223 |
| 标准包装： | 4,000 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
Package Marking and Ordering Information
Device Marking
FDT3N40
Device
FDT3N40TF
Package
SOT-223
Reel Size
330mm
Tape Width
12mm
Quantity
4000
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 ? A
I D = 250 ? A, Referenced to 25 ? C
V DS = 400V, V GS = 0V
V DS = 320V, T C = 125 ? C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
400
--
--
--
--
--
--
0.4
--
--
--
--
--
--
1
10
100
-100
V
V/ ? C
? A
? A
nA
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 ? A
V GS = 10V, I D = 1A
3.0
--
--
2.8
5.0
3.4
V
?
g FS
Forward Transconductance
V DS = 40V, I D = 1A
(Note 4)
--
2
--
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
--
--
--
173
30
3.7
225
40
6
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 200V, I D = 2A
R G = 25 ?
V DS = 320V, I D = 2A
V GS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
10
30
10
25
4.5
1.2
2
30
70
30
60
6
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
2
8
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0V, I S = 2A
--
--
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 2A
dI F /dt =100A/ ? s
(Note 4)
--
--
210
0.75
--
--
ns
? C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, I AS = 2A, V DD = 50V, R G = 25 ? , Starting T J = 25 ? C
3. I SD ? 2A, di/dt ? 200A/ ? s, V DD ? BV DSS , Starting T J = 25 ? C
4. Pulse Test: Pulse width ? 300 ? s, Duty Cycle ? 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
?200 9 Fairchild Semiconductor Corporation
FDT3N40 Rev. C0
2
www.fairchildsemi.com
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