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| 型号： | FDT3612 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 3.7A SOT-223 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 632pF @ 50V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-4 |
| 包装： | 标准包装 |
| 其它名称： | FDT3612DKR |
February 2012
FDT3612
100V N-Channel PowerTrench ? MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
? DC/DC converter
? Motor driving
D
D
S
Features
? 3.7 A, 100 V. R DS(ON) = 120 m ? @ V GS = 10 V
R DS(ON) = 130 m ? @ V GS = 6 V
? Fast switching speed
? Low gate charge (14nC typ)
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability in a
widely used surface mount package
D
D
S
SOT-223
G
D
G
D
S
SOT-223 *
(J23Z)
G
G
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
100
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
3.7
A
– Pulsed
20
P D
Maximum Power Dissipation
(Note 1a)
3.0
W
(Note 1b)
(Note 1c)
1.3
1.1
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
3612
Device
FDT3612
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 20 12 Fairchild Semiconductor Corporation
FDT3612 Rev. C 2 (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT3612 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDT3612_Q | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT3612_SB82273 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT3N40TF | 功能描述:MOSFET 400V N-Chan UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT40 | 制造商:Panasonic Electric Works 功能描述:OPTICAL SENSOR FD-T40 |
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