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| 型号： | FDT3612 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 3.7A SOT-223 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 632pF @ 50V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-4 |
| 包装： | 标准包装 |
| 其它名称： | FDT3612DKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD = 50 V, I D = 3.7 A
90
3.7
mJ
A
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
100
106
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = 80 V,
V GS = 20 V,
V GS = –20 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
10
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 10 V, I D = 3.7 A
2
2.5
–6
88
4
120
V
mV/ ° C
m ?
On–Resistance
V GS = 6 V, I D = 3.5 A
V GS = 10 V, I D = 3.7A, T J = 125 ° C
94
170
130
245
I D(on)
On–State Drain Current
V GS = 10 V, V DS = 10 V
10
A
g FS
Forward Transconductance
V DS = 10 V,
I D = 3.7 A
11
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 50 V,
f = 1.0 MHz
V GS = 0 V,
632
40
20
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 50 V,
V GS = 10 V,
V DS = 50 V,
V GS = 10 V
I D = 1 A,
R GEN = 6 ?
I D = 3.7 A,
8.5
2
23
4.5
14
2.4
17
4
37
9
20
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
3.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.5
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = 2.5 A
(Note 2)
0.75
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
in pad of 2 oz
a) 42°C/W when
mounted on a 1in 2
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
2
c) 110°C/W when mounted on a
minimum pad.
copper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDT3612 Rev. C 2 (W)
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相关代理商/技术参数 |
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| FDT3612 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDT3612_Q | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT3612_SB82273 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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