- 您现在的位置：买卖IC网 > PDF目录375785 > FDT3612 (FAIRCHILD SEMICONDUCTOR CORP) 100V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDT3612 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 100V N-Channel PowerTrench MOSFET |
| 中文描述： | 3.7 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 108K |
| 代理商： | FDT3612 |
FDT3612 Rev. C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 50 V, I
D
= 3.7 A
90
3.7
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
100
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
106
mV/
°
C
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
10
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V, I
D
= 3.7A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 10 V,
2
2.5
4
V
Gate Threshold Voltage
–6
mV/
°
C
I
D
= 3.7 A
I
D
= 3.5 A
88
94
170
11
120
130
245
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 3.7 A
10
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
632
40
20
pF
pF
pF
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
8.5
2
23
4.5
14
2.4
3.8
17
4
37
9
20
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 50 V,
V
GS
= 10 V
I
D
= 3.7 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
2.5
A
V
GS
= 0 V,
I
S
= 2.5 A
(Note 2)
0.75
1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 42°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
in
pad of 2 oz
copper
c) 110°C/W when mounted on a
minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDT434 | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDT434P | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDT439N | N-Channel 2.5V Specified EnhancementMode Field Effect Transistor |
| FDT457N | CAP CER 2.2UF 16V 20% X7R 1210 |
| FDT458P | 30V P-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT3612 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDT3612_Q | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT3612_SB82273 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT3N40TF | 功能描述:MOSFET 400V N-Chan UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT40 | 制造商:Panasonic Electric Works 功能描述:OPTICAL SENSOR FD-T40 |
发布紧急采购，3分钟左右您将得到回复。