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参数资料
| 型号： | FDT3612 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 100V N-Channel PowerTrench MOSFET |
| 中文描述： | 3.7 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/5页 |
| 文件大小： | 108K |
| 代理商： | FDT3612 |
FDT3612 Rev. C1 (W)
Typical Characteristics
0
4
8
12
16
20
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
5.0V
V
GS
= 10V
4.0V
4.5V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.0V
4.5V
5.0V
10V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 3.7A
V
GS
= 10V
0
0.1
0.2
0.3
0.4
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1.9 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
-55
o
C
V
DS
= 10V
25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT3612 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDT3612_Q | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT3612_SB82273 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT3N40TF | 功能描述:MOSFET 400V N-Chan UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT40 | 制造商:Panasonic Electric Works 功能描述:OPTICAL SENSOR FD-T40 |
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