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参数资料
| 型号： | FDT457N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | CAP CER 2.2UF 16V 20% X7R 1210 |
| 中文描述： | 5 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 94K |
| 代理商： | FDT457N |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
35
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
T
J
=55°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.6
3
V
Gate Threshold Voltage Temp.Coefficient
-4.2
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 5 A
0.043
0.06
T
J
=125°C
0.065
0.1
V
GS
= 4.5 V, I
D
= 3.8 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 5 A
0.071
0.09
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
5
A
Forward Transconductance
5
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
235
pF
Output Capacitance
145
pF
Reverse Transfer Capacitance
50
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
5
10
ns
Turn - On Rise Time
12
22
ns
Turn - Off Delay Time
12
22
ns
Turn - Off Fall Time
3
8
ns
Total Gate Charge
V
DS
= 10 V, I
D
= 5 A,
V
GS
= 5 V
4.2
5.9
nC
Gate-Source Charge
1.3
nC
Gate-Drain Charge
1.7
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
2.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.5 A
(Note 2)
0.85
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
FDT457N Rev.C
a. 42
o
C/W when mounted on a 1 in
2
pad of
2oz Cu.
b. 95
o
C/W when mounted on a
0.066 in
2
pad of 2oz Cu.
c. 110
o
C/W when mounted on a 0.00123
in
2
pad of 2oz Cu.
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相关代理商/技术参数 |
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|---|---|
| FDT457NJ23Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
| FDT458P | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT458P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT459N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT459NJ23Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SOT-223 |
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