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参数资料
| 型号： | FDT457N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | CAP CER 2.2UF 16V 20% X7R 1210 |
| 中文描述： | 5 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/4页 |
| 文件大小： | 94K |
| 代理商： | FDT457N |
FDT457N Rev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = 10V
I = 5 A
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
4.5
4.0
3.0
3.5
5.0
6.0
0
2
4
6
8
10
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
V =3.5V
R
D
5.0
7.0
6.0
4.5
4.0
10
2
4
6
8
10
0
0.05
0.1
0.15
0.2
0.25
V ,GATE TO SOURCE VOLTAGE (V)
R
D
I = 2A
T = 25°C
T = 125°C
A
1
2
3
4
5
6
0
2
4
6
8
10
12
14
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 10V
T = -55°C
125°C
25°C
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
10
I
S
25°C
-55°C
V = 0V
J
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT457NJ23Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
| FDT458P | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT458P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT459N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT459NJ23Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SOT-223 |
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