- 您现在的位置：买卖IC网 > Datasheet目录428 > FDU2572 (Fairchild Semiconductor)MOSFET N-CH 150V 29A I-PAK Datasheet资料下载
参数资料
| 型号： | FDU2572 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 29A I-PAK |
| 标准包装： | 1,800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 29A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 54 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1770pF @ 25V |
| 功率 - 最大： | 135W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | TO-251AA |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FDD2572
FDU2572
Device
FDD2572
FDU2572
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
150
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 120V
V GS = 0V
V GS = ± 20V
T C = 150 o
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
-
4
V
I D =9A, V GS =10V
-
0.045
0.054
r DS(ON)
Drain to Source On Resistance
I D = 4A, V GS = 6V,
-
0.050
0.075
?
I D =9A, V GS =10V, T C =175 o C
-
0.126
0.146
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
-
1770
183
40
26
-
-
-
34
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 75V
I D = 9A
I g = 1.0mA
-
-
-
-
3.3
8
5
6
4.3
-
-
-
nC
nC
nC
nC
Resistive Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
11
36
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 75V, I D = 9A
V GS = 10V, R GS = 11.0 ?
-
-
-
-
14
31
14
-
-
-
-
66
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 9A
I SD = 4A
I SD = 9A, dI SD /dt =100A/ μ s
I SD = 9A, dI SD /dt =100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
74
169
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 0.2mH, I AS = 19A.
?2002 Fairchild Semiconductor Corporation
FDD2572 / FDU2572 Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| FDU3706 | MOSFET N-CH 20V 14.7A I-PAK |
| FDU6612A | MOSFET N-CH 30V 9.5A I-PAK |
| FDU6688 | MOSFET N-CH 30V 84A I-PAK |
| FDU7030BL | MOSFET N-CH 30V 14A I-PAK |
| FDU8778 | MOSFET N-CH 25V 35A I-PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDU2572_Q | 功能描述:MOSFET 150V 29a 0.056 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU-2-6R000 | 制造商:DATADELAY 制造商全称:Data Delay Devices, Inc. 功能描述:FREQUENCY DOUBLING UNIT |
| FDU2-6R000 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC |
| FDU-2-6R000M | 制造商:DATADELAY 制造商全称:Data Delay Devices, Inc. 功能描述:FREQUENCY DOUBLING UNIT |
| FDU2-6R000M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC |
发布紧急采购，3分钟左右您将得到回复。