参数资料
型号: FDZ375P
厂商: Fairchild Semiconductor
文件页数: 2/6页
文件大小: 0K
描述: MOSFET P-CH 20V WLCSP 1X1
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 78 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 4.5V
输入电容 (Ciss) @ Vds: 865pF @ 10V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: 4-XFBGA,WLCSP
供应商设备封装: 4-WLCSP(1x1)
包装: 标准包装
其它名称: FDZ375PDKR
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 μ A, V GS = 0 V
I D = -250 μ A, referenced to 25 °C
V DS = -16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
-20
-12
-1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 μ A
I D = -250 μ A, referenced to 25 °C
-0.3
-0.5
2
-1.2
V
mV/°C
V GS = -4.5 V, I D = -2.0 A
V GS = -2.5 V, I D = -1.5A
65
77
78
92
r DS(on)
Static Drain to Source On Resistance
V GS = -1.8 V, I D = -1.0 A
V GS = -1.5 V, I D = -1.0 A
92
112
112
150
m ?
V GS = -4.5 V, I D = -2.0 A,
T J =125°C
98
143
g FS
Forward Transconductance
V DD = -5 V, I D = -3.3 A
11
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1 MHz
650
110
95
865
145
150
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
5.3
11
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = -10 V, I D = -3.3 A,
V GS = -4.5 V, R GEN = 6 ?
V GS = -4.5 V, V DD = -10 V,
I D = -3.3 A
8.2
138
84
11
0.8
3
15
221
124
15
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
-1.1
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = -1.3 A
(Note 2)
-0.7
-1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = -3.3 A, di/dt = 100 A/ μ s
68
43
109
69
ns
nC
Notes:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
a. 75 °C/W when mounted on
a 1 in 2 pad of 2 oz copper.
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
?2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
2
www.fairchildsemi.com
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