参数资料
型号: FGB7N60UNDF
厂商: Fairchild Semiconductor
文件页数: 1/9页
文件大小: 0K
描述: IGBT NPT 600V 14A D2PAK
标准包装: 50
IGBT 类型: NPT
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.3V @ 15V,7A
电流 - 集电极 (Ic)(最大): 14A
功率 - 最大: 83W
输入类型: 标准
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263-3
包装: 管件
September 2013
FGB7N60UNDF
600 V, 7 A
Short Circuit Rated IGBT
Features
? Short Circuit Rated 10 us
? High Current Capability
? High Input Impedance
? Fast Switching
? RoHS Compliant
COLLECTOR
(FLANGE)
Applications
? Sewing Machine, CNC, Home Appliances, Motor Control
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
C
G C
E
TO-263AB/D 2 -PAK
G
E
Absolute Maximum Ratings
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
600
± 20
Unit
V
V
@ T C = 25 C
I C
I CM (1)
I F
P D
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
o
@ T C = 100 o C
@ T C = 25 o C
@ T C = 25 o C
@ T C = 100 o C
@ T C = 25 o C
@ T C = 100 o C
14
7
21
7
3.5
83
33
A
A
A
A
A
W
W
T J
Operating Junction Temperature
-55 to +150
o
C
T stg
T L
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
-55 to +150
300
o C
o C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
R θ JC (IGBT)
Thermal Resistance, Junction to Case
1.5
o
C / W
R θ JC (Diode)
Thermal Resistance, Junction to Case
3.5
o C / W
R θ JA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
40
o
C / W
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
?2011 Fairchild Semiconductor Corporation
FGB7N60UNDF Rev. C1
1
www.fairchildsemi.com
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