参数资料
型号: FGB7N60UNDF
厂商: Fairchild Semiconductor
文件页数: 6/9页
文件大小: 0K
描述: IGBT NPT 600V 14A D2PAK
标准包装: 50
IGBT 类型: NPT
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.3V @ 15V,7A
电流 - 集电极 (Ic)(最大): 14A
功率 - 最大: 83W
输入类型: 标准
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263-3
包装: 管件
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
T C = 25 C
T C = 125 C
30
10
t d(on)
500
Common Emitter
V GE = 15V, R G = 10 Ω
o
o
100
t f
1
t r
T C = 25 C
T C = 125 C
Common Emitter
V GE = 15V, R G = 10 Ω
o
o
t d(off)
0.1
0
2
4
6
8
10
12
14
10
0
2
4
6
8
10
12
14
16
18
20
T C = 25 C
T C = 125 C
Collector Current, I C [A]
Figure 15. Switching Loss vs.
Gate Resistance
1000
Common Emitter
V CC = 400V, V GE = 15V
I C = 7A
o
o
E on
Collector Current, I C [A]
Figure 16. Switching Loss vs
Collector Current
1000
E on
E off
100
Common Emitter
V GE = 15V, R G = 10 Ω
T C = 25 C
T C = 125 C
100
50
E off
10
o
o
0
10
20 30 40
50
60
0
5
10
15
20
Gate Resistance, R G [ Ω ]
Figure 17. Turn off Switching
SOA Characteristics
30
Collector Current, I C [A]
Figure 18. Forward Characteristics
30
10
T J = 125 C
T J = 75 C
10
o
o
T J = 25 C
o
1
Safe Operating Area
V GE = 15V, T C = 125 C
1
1
10
o
100
1000
0.2
0
1 2
3
Collector-Emitter Voltage, V CE [V]
Forward Voltage, V F [V]
?2011 Fairchild Semiconductor Corporation
FGB7N60UNDF Rev. C1
6
www.fairchildsemi.com
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