- 您现在的位置：买卖IC网 > Datasheet目录430 > FGH40T100SMD (Fairchild Semiconductor)IGBT N-CH 1000V 80A TO-247-3 Datasheet资料下载
参数资料
| 型号： | FGH40T100SMD |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH 1000V 80A TO-247-3 |
| 标准包装： | 30 |
| IGBT 类型： | 沟道和场截止 |
| 电压 - 集电极发射极击穿（最大）： | 1000V |
| Vge, Ic时的最大Vce（开）： | 2.3V @ 15V，40A |
| 电流 - 集电极 (Ic)（最大）： | 80A |
| 功率 - 最大： | 333W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247-3 |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FGH40T100SMD
Device
FGH40T100SMD
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30ea
Electrical Characteristics of the IGBT
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
Collector to Emitter Breakdown Voltage V GE = 0 V, I C = 1 mA
1000
-
-
V
Δ BV CE S
Δ T J
I CES
I GES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0 V, I C = 250 uA
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
-
-
-
0.6
-
-
-
1000
±500
V/ o C
μ A
nA
On Characteristics
V GE(th)
V CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
I C = 250 uA, V CE = V GE
I C = 40 A , V GE = 15 V
I C = 40 A , V GE = 15 V,
T C = 175 o C
4.2
-
-
5.3
1.9
2.4
6.5
2.3
-
V
V
V
Dynamic Characteristics
C ies
Input Capacitance
-
3980
5295
pF
C oes
C res
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
-
-
124
76
165
115
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
-
-
29
42
38
55
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
Q g
Q ge
Q gc
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V CC = 600 V, I C = 40 A,
R G = 10 Ω , V GE = 15 V,
Inductive Load, T C = 25 o C
V CC = 600 V, I C = 40 A,
R G = 10 Ω , V GE = 15 V,
Inductive Load, T C = 175 o C
V CE = 600 V, I C = 40 A,
V GE = 15 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
285
23
2.35
1.15
3.5
27
49
285
20
4.4
1.9
6.3
265
32
135
371
30
3.1
1.5
4.6
36
64
371
26
5.7
2.5
8.2
398
48
203
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
?2012 Fairchild Semiconductor Corporation
FGH40T100SMD Rev. C4
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FGH50N3 | IGBT N-CH PT 300V 75A TO247 |
| FGH50N6S2D | IGBT N-CHAN 600V 75A TO-247 |
| FGH60N60SFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SFTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SMD | IGBT 600V 60A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH40T120SMD | 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 40A FS2 TRENCH IGBT - Rail/Tube |
| FGH40T120SMD_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 40A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 40A TRENCH TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 80A 555W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 40A FS2 Trench IGBT |
| FGH40T65SPD_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 80A 267W TO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 80A 268W TO-247 |
| FGH40T65UPD | 功能描述:IGBT 晶体管 650 V 80 A 268 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH50N3 | 功能描述:IGBT 晶体管 300V PT N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。