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参数资料
| 型号： | FGH60N60SMD |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IGBT 600V 60A TO-247 |
| 标准包装： | 150 |
| IGBT 类型： | 场截止 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，60A |
| 电流 - 集电极 (Ic)（最大）： | 120A |
| 功率 - 最大： | 600W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247-3 |
| 包装： | 管件 |
November 2013
FGH60N60SMD
600 V, 60 A Field Stop IGBT
? Maximum Junction Temperature: T J = 175 C
Features
o
? Positive Temperaure Co-efficient for easy Parallel Operating
? High Current Capability
? Low Saturation Voltage: V CE(sat) = 1.9 V(Typ.) @ I C = 60 A
? High Input Impedance
? Fast Switching: E OFF = 7.5 uJ/A
? Tightened Parameter Distribution
? RoHS Compliant
Applications
? Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2 nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
E
C
C
G
G
COLLECTOR
Absolute Maximum Ratings
(FLANGE)
E
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Ratings
600
? 20
? 30
Unit
V
V
V
@ T C = 25 C
I C
I CM (1)
I F
I FM (1)
P D
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T C = 25 o C
@ T C = 100 o C
o
@ T C = 100 o C
@ T C = 25 o C
@ T C = 100 o C
120
60
180
60
30
180
600
300
A
A
A
A
A
A
W
W
T J
T stg
T L
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
-55 to +175
-55 to +175
300
o
o
o
C
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
?2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
1
www.fairchildsemi.com
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PDF描述 |
|---|---|
| FGH60N60UFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH75N60UFTU | IGBT N-CH 600V 75A TO-247 |
| FGH80N60FD2TU | IGBT 600V 80A TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH60N60UFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60UFDTU | 功能描述:IGBT 晶体管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH60N6S2 | 功能描述:IGBT 晶体管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH60N6S2 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH75N60SF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
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