参数资料
型号: FGH60N60UFDTU
厂商: Fairchild Semiconductor
文件页数: 1/9页
文件大小: 0K
描述: IGBT 120A 600V FIELD STOP TO-247
产品目录绘图: IGBT TO-247 Package
标准包装: 150
IGBT 类型: 场截止
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.4V @ 15V,60A
电流 - 集电极 (Ic)(最大): 120A
功率 - 最大: 298W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
November 2013
FGH60N60UFD
600V, 60A Field Stop IGBT
Features
? High Current Capability
? Low Saturation Voltage: V CE(sat) = 1.9 V @ I C = 60 A
? High Input Impedance
? Fast Switching
? RoHS Compliant
Applications
? Solar Inverter, UPS, Welder and PFC
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
E
C
C
G
G
COLLECTOR
Absolute Maximum Ratings
(FLANGE)
E
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
600
± 20
Unit
V
V
Collector Current
@ T C = 25 o C
120
A
@ T C = 100 C
@ T C = 25 C
@ T C = 100 C
I C
I CM (1)
P D
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
o
o
@ T C = 25 o C
o
60
180
298
119
A
A
W
W
T J
T stg
T L
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
-55 to +150
-55 to +150
300
o
o
o
C
C
C
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
R ? JC (IGBT)
R ? JC (Diode)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
-
-
0.33
1.1
o
o
C / W
C / W
R ? JA
Thermal Resistance, Junction to Ambient
-
40
o C / W
?2013 Fairchild Semiconductor Corporation
FGH60N60UFD Rev.C1
1
www.fairchildsemi.com
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