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参数资料
| 型号： | FGL35N120FTDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IGBT 1200V 35A TO-264 |
| 标准包装： | 25 |
| IGBT 类型： | 沟道和场截止 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.2V @ 15V，35A |
| 电流 - 集电极 (Ic)（最大）： | 70A |
| 功率 - 最大： | 368W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
November 2013
FGL35N120FTD
1200 V, 35 A Field Stop Trench IGBT
Features
? Field Stop Trench Technology
? High Speed Switching
? Low Saturation Voltage: V CE(sat) = 1.68 V @ I C = 35 A
? High Input Impedance
General Description
Using advanced field stop trench IGBT technology, Fairchild’s
1200V trench IGBTs offer the optimum performance for hard
switching application such as solar inverter, UPS, welder appli-
cations.
Applications
? Solar Inverter, UPS, Welder, PFC
C
G
G C E
TO-264 3L
E
Absolute Maximum Ratings
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
1200
? 25
Unit
V
V
@ T C = 25 C
I C
I CM (1)
I F
P D
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T C = 25 o C
@ T C = 100 o C
@ T C = 25 o C
@ T C = 25 o C
@ T C = 100 o C
o
@ T C = 100 o C
70
35
105
80
40
368
147
A
A
A
A
A
W
W
T J
T stg
T L
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
-55 to +150
-55 to +150
300
o
o
o
C
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R ? JC (IGBT)
Parameter
Thermal Resistance, Junction to Case
Max.
0.34
Unit
o C / W
R ? JC (Diode)
R ? JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.9
25
o
o
C / W
C / W
?2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGL40N120AN | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGL40N120AN_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGL40N120AND | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT NPT TO-264 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-264 TUBE 25 |
| FGL40N120AND_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGL40N120ANDTU | 功能描述:IGBT 晶体管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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