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参数资料
| 型号： | FGP15N60UNDF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH 600V 30A TO-220-3 |
| 标准包装： | 50 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，15A |
| 电流 - 集电极 (Ic)（最大）： | 30A |
| 功率 - 最大： | 178W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
Stptember 2013
FGP15N60UNDF
600 V, 15 A
Short Circuit Rated IGBT
Features
? Short Circuit Rated 10us
? High Current Capability
? High Input Impedance
? Fast Switching
? RoHS Compliant
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
Applications
? Sewing Machine, CNC, Home Appliances, Motor Control
C
G C E
TO-220
G
E
Absolute Maximum Ratings
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
600
± 20
Unit
V
V
@ T C = 25 C
@ T C = 25 C
@ T C = 100 C
I C
I CM (1)
I F
P D
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T C = 25 o C
@ T C = 100 o C
o
o
o
@ T C = 25 o C
@ T C = 100 o C
30
15
45
15
7.5
178
71
A
A
A
A
A
W
W
T J
T stg
Operating Junction Temperature
Storage Temperature Range
-55 to +150
-55 to +150
o
o
C
C
Notes:
1: Repetitive test , Pulse width=100 usec , Duty=0.2, V GE =13.5 V
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
R θ JC (IGBT)
R θ JC (Diode)
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
0.7
2.3
62.5
o
o
o
C / W
C / W
C / W
?2011 Fairchild Semiconductor Corporation
FGP15N60UNDF Rev. C1
1
www.fairchildsemi.com
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