参数资料
型号: FGPF4633TU
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: IGBT PDP 330V 300A TO-220F
产品目录绘图: IGBT TO-220F Package
标准包装: 50
IGBT 类型: 沟道
电压 - 集电极发射极击穿(最大): 330V
Vge, Ic时的最大Vce(开): 1.8V @ 15V,70A
功率 - 最大: 30.5W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
November 2013
FGPF4633
330 V PDP Trench IGBT
Features
? High Current Capability
? Low Saturation Voltage: V CE(sat) = 1.55 V @ I C = 70 A
? High Input Impedance
? Fast Switching
? RoHS Compliant
Applications
General Description
Using novel trench IGBT technology, Fairchild's new series of
trench IGBTs offer the optimum performance for consumer
appliances, PDP TV and lighting applications where low con-
duction and switching losses are essential.
?
PDP TV, Consumer Appliances, Lighting
G C E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
330
? 30
Unit
V
V
I C pulse(1)*
P D
Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T C = 25 o C
@ T C = 25 o C
@ T C = 100 o C
300
30.5
12.2
A
W
W
T J
T stg
T L
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
-55 to +150
-55 to +150
300
o
o
o
C
C
C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
R ? JC (IGBT)
R ? JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
-
4.1
62.5
o
o
C / W
C / W
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5 ? sec
* Ic_pluse limited by max Tj
?2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
1
www.fairchildsemi.com
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