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参数资料
| 型号： | FGPF4633TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT PDP 330V 300A TO-220F |
| 产品目录绘图： | IGBT TO-220F Package |
| 标准包装： | 50 |
| IGBT 类型： | 沟道 |
| 电压 - 集电极发射极击穿（最大）： | 330V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，70A |
| 功率 - 最大： | 30.5W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width
Quantity
FGPF4633
FGPF4633
TO-220F
Tube
N/A
N/A
50
Electrical Characteristics of the IGBT
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
Collector to Emitter Breakdown Voltage V GE = 0 V, I C = 250 ? A
330
-
-
V
? BV CE S
? T J
I CES
I GES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0 V, I C = 250 ? A
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
-
-
-
0.3
-
-
-
100
±400
V/ o C
? A
nA
On Characteristics
V GE(th)
V CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I C = 250 ? A, V CE = V GE
I C = 20 A , V GE = 15 V
I C = 40 A , V GE = 15 V
I C = 70 A , V GE = 15 V,
T C = 25 o C
I C = 70 A , V GE = 15 V,
T C = 125 o C
2.4
-
-
-
-
3.3
1.1
1.35
1.55
1.61
4.0
-
-
1.8
-
V
V
V
V
Dynamic Characteristics
C ies
Input Capacitance
-
1715
-
pF
C oes
C res
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
-
-
75
55
-
-
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
-
8
-
ns
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
Q g
Q ge
Q gc
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V CC = 200 V, I C = 20 A
R G = 5 ? , V GE = 15 V
Resistive Load, T C = 25 o C
V CC = 200 V, I C = 20 A,
R G = 5 ? , V GE = 15 V,
Resistive Load, T C = 125 o C
V CE = 200 V , I C = 20 A
V GE = 15 V
-
-
-
-
-
-
-
-
-
-
30
52
260
8
32
53
341
60
8
20
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
?2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. C1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FGPF50N30T | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:300V, 50A PDP IGBT |
| FGPF50N30TTU | 功能描述:IGBT 晶体管 300V 50A PDP RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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