参数资料
型号: FGP10N60UNDF
厂商: Fairchild Semiconductor
文件页数: 1/9页
文件大小: 0K
描述: IGBT N-CH 600V 20A TO-220-3
标准包装: 50
IGBT 类型: NPT
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.45V @ 15V,10A
电流 - 集电极 (Ic)(最大): 20A
功率 - 最大: 139W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220-3
包装: 管件
September 2013
FGP10N60UNDF
600 V, 10 A
Short Circuit Rated IGBT
Features
? Short Circuit Rated 10 us
? High Current Capability
? High Input Impedance
? Fast Switching
? RoHS Compliant
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
Applications
? Sewing Machine, CNC, Home Appliances, Motor Control
C
G C E
TO-220
G
E
Absolute Maximum Ratings
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
600
± 20
Unit
V
V
I C
I CM (1)
I F
PD
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T C = 25 o C
@ T C = 100 o C
@ T C = 25 o C
@ T C = 25 o C
@ T C = 100 o C
@ TC = 25oC
@ TC = 100oC
20
10
30
10
5
139
56
A
A
A
A
A
W
W
T J
T stg
Operating Junction Temperature
Storage Temperature Range
-55 to +150
-55 to +150
o
o
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
R θ JC (IGBT)
Thermal Resistance, Junction to Case
-
0.9
o
C / W
R θ JC (Diode)
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
-
-
3.5
62.5
o C / W
o C / W
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
?2012 Fairchild Semiconductor Corporation
FGP10N60UNDF Rev. C1
1
www.fairchildsemi.com
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