参数资料
型号: FGP10N60UNDF
厂商: Fairchild Semiconductor
文件页数: 8/9页
文件大小: 0K
描述: IGBT N-CH 600V 20A TO-220-3
标准包装: 50
IGBT 类型: NPT
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.45V @ 15V,10A
电流 - 集电极 (Ic)(最大): 20A
功率 - 最大: 139W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220-3
包装: 管件
Mechanical Dimensions
Figure 23. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimensions in Millimeters
?2012 Fairchild Semiconductor Corporation
FGP10N60UNDF Rev. C1
8
www.fairchildsemi.com
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