- 您现在的位置：买卖IC网 > Datasheet目录430 > FGP10N60UNDF (Fairchild Semiconductor)IGBT N-CH 600V 20A TO-220-3 Datasheet资料下载
参数资料
| 型号： | FGP10N60UNDF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH 600V 20A TO-220-3 |
| 标准包装： | 50 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.45V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 20A |
| 功率 - 最大： | 139W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FGP10N60UNDF
Device
FGP10N60UNDF
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50ea
Electrical Characteristics of the IGBT
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
Collector to Emitter Breakdown Voltage V GE = 0 V, I C = 250 μ A
600
-
-
V
I CES
I GES
Collector Cut-Off Current
G-E Leakage Current
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
-
-
-
-
1
±10
mA
uA
On Characteristics
V GE(th)
V CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
I C = 10 mA, V CE = V GE
I C = 10 A , V GE = 15 V
I C = 10 A , V GE = 15 V,
T C = 125 o C
5.5
-
-
6.8
2
2.3
8.5
2.45
-
V
V
V
Dynamic Characteristics
C ies
Input Capacitance
-
517
pF
C oes
C res
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
-
-
65
20
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
-
-
8.0
6.3
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
T sc
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
V CC = 400 V, I C = 10 A,
R G = 10 Ω , V GE = 15 V,
Inductive Load, T C = 25 o C
V CC = 400 V, I C = 10 A,
R G = 10 Ω , V GE = 15 V,
Inductive Load, T C = 125 o C
V CC = 350 V,
R G = 100 Ω , V GE = 15V ,
T C = 150 o C
-
-
-
-
-
-
-
-
-
-
-
-
10
52.2
19.1
0.15
0.05
0.2
8.1
7.3
55.1
34.2
0.22
0.08
0.3
-
24.8
-
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
μ s
?2012 Fairchild Semiconductor Corporation
FGP10N60UNDF Rev. C1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FGP15N60UNDF | IGBT N-CH 600V 30A TO-220-3 |
| FGP5N60LS | IGBT 600V 10A 83W TO220 |
| FGPF4533 | IGBT PDP 330V TO-220-3FP |
| FGPF4536 | IGBT PDP 360V TO-220-3FP |
| FGPF4633TU | IGBT PDP 330V 300A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGP-1-1/2 GREY | 制造商:ICO RALLY 功能描述:Cable |
| FGP-1-100-BLK | 制造商:ICO RALLY 功能描述: |
| FGP-1401-0501-2-0FF | 制造商:YAMAICHI 制造商全称:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows) |
| FGP15N60UNDF | 功能描述:IGBT 晶体管 600V 15A NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGP-1601-0501-2-0FF | 制造商:YAMAICHI 制造商全称:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows) |
发布紧急采购，3分钟左右您将得到回复。