- 您现在的位置：买卖IC网 > Datasheet目录430 > FGL35N120FTDTU (Fairchild Semiconductor)IGBT 1200V 35A TO-264 Datasheet资料下载
参数资料
| 型号： | FGL35N120FTDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IGBT 1200V 35A TO-264 |
| 标准包装： | 25 |
| IGBT 类型： | 沟道和场截止 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.2V @ 15V，35A |
| 电流 - 集电极 (Ic)（最大）： | 70A |
| 功率 - 最大： | 368W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width
Quantity
FGL35N120FTDTU
FGL35N120FTD
TO-264
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
Collector to Emitter Breakdown Voltage V GE = 0 V, I C = 250 ? A
1200
-
-
V
I CES
I GES
Collector Cut-Off Current
G-E Leakage Current
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
-
-
-
-
1
±250
mA
nA
On Characteristics
V GE(th)
V CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
I C = 35 mA, V CE = V GE
I C = 35 A , V GE = 15 V
I C = 35 A , V GE = 15 V,
T C = 125 o C
3.5
-
-
6.2
1.68
2.0
7.5
2.2
-
V
V
V
Dynamic Characteristics
C ies
Input Capacitance
-
5090
-
pF
C oes
C res
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
-
-
180
95
-
-
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
-
-
34
63
-
-
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
Q g
Q ge
Q gc
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V CC = 600 V, I C = 35 A,
R G = 10 ? , V GE = 15 V,
Inductive Load, T C = 25 o C
V CC = 600 V, I C = 35 A,
R G = 10 ? , V GE = 15 V,
Inductive Load, T C = 125 o C
V CE = 600 V, I C = 35 A,
V GE = 15 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
172
107
2.5
1.7
4.2
33
66
180
146
3.1
2.1
5.2
210
42
101
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
?2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FGL60N100BNTDTU | IGBT N-CH 1000V 60A TO-264 |
| FGP10N60UNDF | IGBT N-CH 600V 20A TO-220-3 |
| FGP15N60UNDF | IGBT N-CH 600V 30A TO-220-3 |
| FGP5N60LS | IGBT 600V 10A 83W TO220 |
| FGPF4533 | IGBT PDP 330V TO-220-3FP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGL40N120AN | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGL40N120AN_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGL40N120AND | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT NPT TO-264 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-264 TUBE 25 |
| FGL40N120AND_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGL40N120ANDTU | 功能描述:IGBT 晶体管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。