参数资料
型号: FGL35N120FTDTU
厂商: Fairchild Semiconductor
文件页数: 9/9页
文件大小: 0K
描述: IGBT 1200V 35A TO-264
标准包装: 25
IGBT 类型: 沟道和场截止
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.2V @ 15V,35A
电流 - 集电极 (Ic)(最大): 70A
功率 - 最大: 368W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-264-3,TO-264AA
供应商设备封装: TO-264
包装: 管件
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Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
?2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
9
www.fairchildsemi.com
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FGL40N120ANDTU 功能描述:IGBT 晶体管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube