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参数资料
| 型号： | FGH60N60SMD |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IGBT 600V 60A TO-247 |
| 标准包装： | 150 |
| IGBT 类型： | 场截止 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，60A |
| 电流 - 集电极 (Ic)（最大）： | 120A |
| 功率 - 最大： | 600W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247-3 |
| 包装： | 管件 |
Thermal Characteristics
Symbol
R ? JC (IGBT)
Parameter
Thermal Resistance, Junction to Case
Typ.
-
Max.
0.25
Unit
o C / W
R ? JC (Diode)
Thermal Resistance, Junction to Case
-
1.1
o
C / W
R ? JA
Thermal Resistance, Junction to Ambient
-
40
o C / W
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width
Quantity
FGH60N60SMD
FGH60N60SMD
TO-247
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
Collector to Emitter Breakdown Voltage V GE = 0 V, I C = 250 ? A
600
-
-
V
? BV CES
????? T J
I CES
I GES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0 V, I C = 250 ? A
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
-
-
-
0.6
-
-
-
250
±400
V/ o C
? A
nA
On Characteristics
V GE(th)
V CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
I C = 250 ? A, V CE = V GE
I C = 60 A , V GE = 15 V
I C = 60 A , V GE = 15 V,
T C = 175 o C
3.5
-
-
4.5
1.9
2.1
6.0
2.5
-
V
V
V
Dynamic Characteristics
C ies
Input Capacitance
-
2915
-
pF
C oes
C res
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
-
-
270
85
-
-
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
-
-
18
47
27
70
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
V CC = 400 V, I C = 60 A,
R G = 3 ? , V GE = 15 V,
Inductive Load, T C = 25 o C
V CC = 400 V, I C = 60 A,
R G = 3 ? , V GE = 15 V,
Inductive Load, T C = 175 o C
-
-
-
-
-
-
-
-
-
-
-
-
104
50
1.26
0.45
1.71
18
41
115
48
2.1
0.78
2.88
146
68
1.94
0.6
2.54
-
-
-
-
-
-
-
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
?2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FGH60N60UFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60UFDTU | 功能描述:IGBT 晶体管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH60N6S2 | 功能描述:IGBT 晶体管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH60N6S2 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH75N60SF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
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