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参数资料
| 型号： | FGH50N3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH PT 300V 75A TO247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| IGBT 类型： | PT |
| 电压 - 集电极发射极击穿（最大）： | 300V |
| Vge, Ic时的最大Vce（开）： | 1.4V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 功率 - 最大： | 463W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | FGH50N3_NL FGH50N3_NL-ND |
April 2013
FGH50N3
300 V SMPS IGBT
General Description
Using Fairchild?'s planar technology, this IGBT is ideal for
many high voltage switching applications operating at high
frequencies where low conduction losses are essential. This
device has been optimized for medium frequency switch
mode power supplies.
Applications
? SMPS
Package
E
C
G
TO-247
COLLECTOR
Features
? Low Saturation Voltage: VCE(sat) = 1.4 V max
? Low EOFF = 6.6 uJ/A
? SCWT = 8 us @ = 125 ℃
? 300V Switching SOA Capability
? Positive Temperature Coefficient above 50 A
Symbol
C
G
(FLANGE)
E
Device Maximum Ratings T C = 25°C unless otherwise noted
Symbol
BV CES
I C25
I C110
I CM
V GES
V GEM
SSOA
E AS
E ARV
P D
T J
T STG
t SC
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T C = 25°C
Collector Current Continuous, T C = 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T J = 150°C, Figure 2
Single Pulse Avalanche Energy, I CE = 30A, L = 1.78mH, V DD = 50V
Single Pulse Reverse Avalanche Energy, I EC = 30A, L = 1.78mH, V DD = 50V
Power Dissipation Total T C = 25°C
Power Dissipation Derating T C > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Short Circuit Withstand Time (Note 2)
Ratings
300
75
75
240
±20
±30
150A at 300V
800
800
463
3.7
-55 to 150
-55 to 150
8
Unit
V
A
A
A
V
V
mJ
mJ
W
W/°C
°C
°C
μ s
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
2. V CE(PK) = 180V, T J = 125°C, V GE = 12Vdc, R G = 5 ?
?2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH50N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50N6S2 | 功能描述:IGBT 晶体管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH50N6S2D | 功能描述:IGBT 晶体管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶体管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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