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参数资料
| 型号： | FGH50N3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH PT 300V 75A TO247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| IGBT 类型： | PT |
| 电压 - 集电极发射极击穿（最大）： | 300V |
| Vge, Ic时的最大Vce（开）： | 1.4V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 功率 - 最大： | 463W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | FGH50N3_NL FGH50N3_NL-ND |
Typical Performance Curves T J = 25 ° C unless otherwise noted (Continued)
1.4
1.2
1.0
0.8
R G = 5 ? , L = 100 μ H, V CE = 180V
T J = 25 o C, T J = 125 o C, V GE = 10V
400
350
300
250
R G = 5 ? , L = 100 μ H, V CE = 180V
T J = 125 o C, V GE = 10V, V GE = 15V
200
0.6
150
0.4
0.2
100
50
0
T J = 25 o C, T J = 125 o C, V GE = 15 V
0
T J = 25 o C, V GE = 10V, V GE = 15V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
35
R G = 5 ? , L = 100 μ H, V CE = 180V
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
100
R G = 5 ? , L = 100 μ H, V CE = 180V
80
30
25
T J = 25 o C, T J = 125 o C, V GE = 10V
60
T J = 25 o C, T J = 125 o C, V GE = 10V
40
20
20
15
T J = 25 o C, T J = 125 o C, V GE = 15V
0
T J = 25 o C, T J = 125 o C, V GE =15V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
170
R G = 5 ? , L = 100 μ H, V CE = 180V
160
150
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
24
R G = 5 ? , L = 100 μ H, V CE = 180V
20
140
T J = 25 o C, T J = 125 o C, V GE = 15V
16
T J = 25 o C, V GE = 10V, 15V
12
130
8
120
110
100
T J = 25 o C, T J = 125 o C, V GE = 10V
4
0
T J = 125 o C, V GE = 10V, 15V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
?2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH50N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50N6S2 | 功能描述:IGBT 晶体管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH50N6S2D | 功能描述:IGBT 晶体管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶体管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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