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参数资料
| 型号： | FGH50N6S2D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CHAN 600V 75A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 功率 - 最大： | 463W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | FGH50N6S2D_NL FGH50N6S2D_NL-ND |
July 2002
FGH50N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
General Description
The FGH50N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
Features
? 100kHz Operation at 390V, 40A
? 200kHZ Operation at 390V, 25A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125 o C
? Low Gate Charge . . . . . . . . . 70nC at V GE = 15V
? Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
?
?
?
?
?
?
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
? UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
? Low Conduction Loss
IGBT (co-pack) formerly Developmental Type TA49344
Diode formerly Developmental Type TA49392
Package
JEDEC STYLE TO-247
E
C
Symbol
C
G
G
E
Device Maximum Ratings T C = 25°C unless otherwise noted
Symbol
BV CES
I C25
I C110
I CM
V GES
V GEM
SSOA
E AS
P D
T J
T STG
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T C = 25°C
Collector Current Continuous, T C = 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T J = 150°C, Figure 2
Pulsed Avalanche Energy, I CE = 30A, L = 1mH, V DD = 50V
Power Dissipation Total T C = 25°C
Power Dissipation Derating T C > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Ratings
600
75
60
240
±20
±30
150A at 600V
480
463
3.7
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
mJ
W
W/°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
?2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2
相关PDF资料 |
PDF描述 |
|---|---|
| FGH60N60SFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SFTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SMD | IGBT 600V 60A TO-247 |
| FGH60N60UFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH75N60UFTU | IGBT N-CH 600V 75A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶体管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH60N60SF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFDTU | 功能描述:IGBT 晶体管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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