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参数资料
| 型号： | FGH50N6S2D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CHAN 600V 75A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 功率 - 最大： | 463W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | FGH50N6S2D_NL FGH50N6S2D_NL-ND |
Package Marking and Ordering Information
Device Marking
50N6S2D
Device
FGH50N6S2D
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics T J = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV CES
Collector to Emitter Breakdown Voltage I C = 250 μ A, V GE = 0
600
-
-
V
I CES
Collector to Emitter Leakage Current
V CE = 600V
T J = 25 ° C
-
-
250
μ A
T J = 125 ° C
-
-
2.8
mA
I GES
Gate to Emitter Leakage Current
V GE = ± 20V
-
-
±250
nA
On State Characteristics
V CE(SAT) Collector to Emitter Saturation Voltage
I C = 30A,
V GE = 15V
T J = 25 ° C
T J = 125 ° C
-
-
1.9
1.7
2.7
2.2
V
V
V EC
Diode Forward Voltage
I EC = 30A
-
2.2
2.6
V
Dynamic Characteristics
Q G(ON)
Gate Charge
I C = 30A,
V CE = 300V
V GE = 15V
V GE = 20V
-
-
70
90
85
110
nC
nC
V GE(TH)
V GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I C = 250 μ A, V CE = V GE
I C = 30A, V CE = 300V
3.5
-
4.3
6.5
5.0
8.0
V
V
Switching Characteristics
SSOA
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
t rr
Switching SOA
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Reverse Recovery Time
T J = 150 ° C, V GE = 15V, R G = 3 ?
L = 100 μ H, V CE = 600V
IGBT and Diode at T J = 25 ° C,
I CE = 30A,
V CE = 390V,
V GE = 15V,
R G = 3 ?
L = 200 μ H
Test Circuit - Figure 26
IGBT and Diode at T J = 125 ° C
I CE = 30A,
V CE = 390V,
V GE = 15V,
R G = 3 ?
L = 200 μ H
Test Circuit - Figure 26
I EC = 30A, dI EC /dt = 200A/ μ s
I EC = 1A, dI EC /dt = 200A/ μ s
150
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
15
55
50
260
330
250
13
15
92
88
260
490
575
50
30
-
-
-
-
-
-
-
350
-
-
150
100
-
600
850
55
42
A
ns
ns
ns
ns
μ J
μ J
μ J
ns
ns
ns
ns
μ J
μ J
μ J
ns
ns
Thermal Characteristics
R θ JC
Thermal Resistance Junction-Case
IGBT
Diode
-
-
-
-
0.27
1.1
° C/W
° C/W
NOTE:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss
of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J
as the IGBT. The diode type is specified in figure 26.
3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I CE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
?2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2
相关PDF资料 |
PDF描述 |
|---|---|
| FGH60N60SFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SFTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SMD | IGBT 600V 60A TO-247 |
| FGH60N60UFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH75N60UFTU | IGBT N-CH 600V 75A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶体管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH60N60SF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFDTU | 功能描述:IGBT 晶体管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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