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参数资料
| 型号： | FGH50N6S2D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CHAN 600V 75A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 功率 - 最大： | 463W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | FGH50N6S2D_NL FGH50N6S2D_NL-ND |
Typical Performance Curves
T J = 25 ° C unless otherwise noted
2500
2250
R G = 3 ? , L = 200 μ H, V CE = 390 V
1400
R G = 3 ? , L = 200 μ H, V CE = 390 V
1200
2000
1750
T J = 25 o C, T J = 125 o C, V GE = 10V
1000
1500
1250
1000
750
800
600
400
T J = 125 o C, V GE = 10V, V GE = 15V
500
200
250
0
T J =
25 o C,
T J =
125 o C,
V GE = 15V
0
T J = 25 o C, V GE = 10V, V GE = 15V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
25
R G = 3 ? , L = 200 μ H, V CE = 390V
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
70
R G = 3 ? , L = 200 μ H, V CE = 390V
60
20
15
T J = 25 o C, T J = 125 o C, V GE = 10V
50
40
10
T J =
25 o C,
T J =
125 o C,
V GE = 15V
30
T J = 25 o C, T J = 125 o C, V GE = 10V
20
5
10
T J = 25 o C, T J = 125 o C, V GE =15V
0
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
100
R G = 3 ? , L = 200 μ H, V CE = 390V
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
125
R G = 3 ? , L = 200 μ H, V CE = 390V
90
100
80
70
V GE = 10V, V GE = 15V, T J = 125 o C
75
T J = 125 o C, V GE = 10V, V GE = 15V
60
50
50
40
V GE = 10V, V GE = 15V, T J = 25 o C
25
T J = 25 o C, V GE = 10V, V GE = 15V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
?2002 Fairchild Semiconductor Corporation
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
FGH50N6S2D RevA2
相关PDF资料 |
PDF描述 |
|---|---|
| FGH60N60SFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SFTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SMD | IGBT 600V 60A TO-247 |
| FGH60N60UFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH75N60UFTU | IGBT N-CH 600V 75A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶体管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH60N60SF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFDTU | 功能描述:IGBT 晶体管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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