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参数资料
| 型号： | FGH50N6S2D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CHAN 600V 75A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 功率 - 最大： | 463W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | FGH50N6S2D_NL FGH50N6S2D_NL-ND |
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge
of energy through the devices. When handling these
devices, care should be exercised to assure that the
static charge built in the handler ’ s body capacitance
is not discharged through the device. With proper
handling and application procedures, however,
IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with
virtually no damage problems due to electrostatic
discharge. IGBTs can be handled safely if the
following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as “ ECCOSORBD ? LD26 ” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means - for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-
voltage rating of V GEM . Exceeding the rated V GE
can result in permanent damage to the oxide layer
in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (I CE ) plots are
possible using the information shown for a typical unit
in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
f MAX1 or f MAX2 ; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f MAX1 is defined by f MAX1 = 0.05/(t d(OFF)I + t d(ON)I ).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. t d(OFF)I and t d(ON)I are
defined in Figure 27. Device turn-off delay can
establish an additional frequency limiting condition for
an application other than T JM . t d(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
f MAX2 is defined by f MAX2 = (P D - P C )/(E OFF + E ON2 ).
The allowable dissipation (P D ) is defined by
P D = (T JM - T C )/R θ JC . The sum of device switching
and conduction losses must not exceed P D . A 50%
duty factor was used (Figure 3) and the conduction
losses (P C ) are approximated by P C = (V CE x I CE )/2.
E ON2 and E OFF are defined in the switching
waveforms shown in Figure 27. E ON2 is the integral of
the instantaneous power loss (I CE x V CE ) during turn-
on and E OFF is the integral of the instantaneous
power loss (I CE x V CE ) during turn-off. All tail losses
are included in the calculation for E OFF ; i.e., the
collector current equals zero (I CE = 0)
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
ECCOSORBD ? is a Trademark of Emerson and Cumming, Inc.
?2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2
相关PDF资料 |
PDF描述 |
|---|---|
| FGH60N60SFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SFTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH60N60SMD | IGBT 600V 60A TO-247 |
| FGH60N60UFDTU | IGBT 120A 600V FIELD STOP TO-247 |
| FGH75N60UFTU | IGBT N-CH 600V 75A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶体管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH60N60SF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFDTU | 功能描述:IGBT 晶体管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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