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参数资料
| 型号： | FGH50N3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH PT 300V 75A TO247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| IGBT 类型： | PT |
| 电压 - 集电极发射极击穿（最大）： | 300V |
| Vge, Ic时的最大Vce（开）： | 1.4V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 功率 - 最大： | 463W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | FGH50N3_NL FGH50N3_NL-ND |
Package Marking and Ordering Information
Device Marking
FGH50N3
Device
FGH50N3
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics T J = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
BV CES
BV ECS
Collector to Emitter Breakdown Voltage I CE = 250 μ A, V GE = 0V
Emitter to Collector Breakdown Voltage I EC = 10mA, V GE = 0V
300V
15V
-
-
-
-
V
V
I CES
Collector to Emitter Leakage Current
V CE = 300V
T J = 25 ° C
-
-
250
μ A
T J = 125 ° C
-
-
2.0
mA
I GES
Gate to Emitter Leakage Current
V GE = ± 20V
-
-
±250
nA
On State Characteristics
V CE(SAT)
Collector to Emitter Saturation Voltage I CE = 30A
V GE = 15V
T J = 25 ° C
T J = 125 ° C
-
-
1.30
1.25
1.4
1.4
V
V
Dynamic Characteristics
Q G(ON)
Gate Charge
I CE = 30A
V CE = 150V
V GE = 15V
V GE = 20V
-
-
180
228
-
-
nC
nC
V GE(TH)
V GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I CE = 250 μ A, V CE = V GE
I CE = 30A, V CE = 150V
4.0
-
4.8
7.0
5.5
-
V
V
Switching Characteristics
SSOA
Switching SOA
T J = 150 ° C, R G = 5 ?,
V GE = 15V , L = 25 μ H,
150
-
-
A
Vce = 300V
t d(ON)I
t rI
t d(OFF)I
t fI
E ON2
E OFF
t d(ON)I
t rI
t d(OFF)I
t fI
E ON2
E OFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
IGBT and Diode at T J = 25 ° C,
I CE = 30A,
V CE = 180V,
V GE = 15V,
R G = 5 ?,
L = 100 μ H,
Test Circuit - Figure 20
IGBT and Diode at T J = 125 ° C,
I CE = 30A,
V CE = 180V,
V GE = 15V,
R G = 5 ?,
L = 100 μ H,
Test Circuit - Figure 20
-
-
-
-
-
-
-
-
-
-
-
-
20
15
135
12
130
92
19
13
155
7
225
135
-
-
-
-
-
120
-
-
190
15
270
200
ns
ns
ns
ns
μ J
μ J
ns
ns
ns
ns
μ J
μ J
Thermal Characteristics
R θ JC
Thermal Resistance Junction-Case
TO-247
-
-
0.27
° C/W
E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT.
NOTE:
1.
The diode type is specified in figure 20.
2. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I CE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
?2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FGH50N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50N6S2 | 功能描述:IGBT 晶体管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH50N6S2D | 功能描述:IGBT 晶体管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶体管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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