参数资料
型号: FGH50N3
厂商: Fairchild Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: IGBT N-CH PT 300V 75A TO247
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Lead Frame Change 20/Dec/2007
标准包装: 150
IGBT 类型: PT
电压 - 集电极发射极击穿(最大): 300V
Vge, Ic时的最大Vce(开): 1.4V @ 15V,30A
电流 - 集电极 (Ic)(最大): 75A
功率 - 最大: 463W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
其它名称: FGH50N3_NL
FGH50N3_NL-ND
Typical Performance Curves T J = 25 ° C unless otherwise noted
200
V GE = 15V
175
T J = 150 o C, R G = 5 ? , V GE = 15V, L = 25 μ H
150
160
125
120
80
PACKAGE LIMITED
100
75
50
40
25
0
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
T C , CASE TEMPERATURE
( o C)
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
500
T J = 125 o C , R G = 5 ? , L = 100 μ H, V CE = 180V
30
V CE = 180V, R G = 5 ? , T J = 125 o C
800
400
T C =
75 o C
25
700
300
V GE = 15V
20
t SC
I SC
600
200
100
60
V GE = 10V
f MAX1 = 0.05 / (t d(OFF)I + t d(ON)I )
f MAX2 = (P D - P C ) / (E ON2 + E OFF )
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R ?JC = 0.27 o C/W, SEE NOTES
15
10
5
0
500
400
300
200
2
10
20
100
9
10
11
12
13
14
15
16
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 3. Operating Frequency vs Collector to
Emitter Current
60
DUTY CYCLE < 0.5%, V GE = 10V
PULSE DURATION = 250 μ s
50
40
30
T J = 25 o C
20
T J = 150 o C
10
T J = 125 o C
0
V GE , GATE TO EMITTER VOLTAGE (V)
Figure 4. Short Circuit Withstand Time
60
DUTY CYCLE < 0.5%, V GE = 15V
PULSE DURATION = 250 μ s
50
40
30
T J = 25 o C
20
T J = 150 o C
10
T J = 125 o C
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
?2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
3
www.fairchildsemi.com
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