参数资料
型号: FQA13N80_F109
厂商: Fairchild Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: MOSFET N-CH 800V 12.6A TO-3P
标准包装: 30
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 800V
电流 - 连续漏极(Id) @ 25° C: 12.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 750 毫欧 @ 6.3A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 88nC @ 10V
输入电容 (Ciss) @ Vds: 3500pF @ 25V
功率 - 最大: 300W
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商设备封装: TO-3PN
包装: 管件
其它名称: FQA13N80_F109-ND
FQA13N80_F109FS
Mechanical Dimensions
Figure 16. T O 3, Plastic, 3-Lead EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003 .
?2007 Fairchild Semiconductor Corporation
FQA13N80_F109 Rev. C1
7
www.fairchildsemi.com
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FQA140N10 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQA14N30 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQA15N70 功能描述:MOSFET DISC BY MFG 7/03 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQA160N08 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQA16N25 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube