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| 型号： | FQA90N08 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 90A TO-3P |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 45A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 110nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3250pF @ 25V |
| 功率 - 最大： | 214W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
October 2013
FQA90N08
N-Channel QFET ? MOSFET
80 V, 90 A, 16 m Ω
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially tailored
to reduce on-state resistance, and to provide superior
switching performance and high avalanche energy strength.
These devices are suitable for switched mode power
supplies, audio amplifier, DC motor control, and variable
switching power applications.
Features
? 90 A, 80 V, R DS(on) = 16 m Ω (Max) @V GS = 10 V,
I D = 45 A
? Low Gate Charge (Typ. 84 nC)
? Low Crss (Typ. 200 pF)
? 100% Avalanche Tested
? 175 ° C Maximum Junction Temperature Rating
D
G
G
D
S
TO-3PN
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA90N08
80
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
90
63.5
A
A
I DM
Drain Current
- Pulsed
(Note 1)
360
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1360
90
21.4
6.5
214
1.43
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +175
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQA90N08
0.7
40
Unit
°C / W
°C / W
?2000 Fairchild Semiconductor Corporation
FQA90N08 Rev. C1
1
www.fairchildsemi.com
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