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参数资料
| 型号： | FQB30N06LTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 32A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1040pF @ 25V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 标准包装 |
| 其它名称： | FQB30N06LTMDKR |
Package Marking and Ordering Information
Device Marking
FQB30N06L
Device
FQB30N06LTM
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 60 V, V GS = 0 V
V DS = 48 V, T C = 150°C
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
60
--
--
--
--
--
--
0.06
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 16 A
V GS = 5 V, I D =16 A
V DS = 25 V, I D = 16 A
1.0
--
--
--
--
0.027
0.035
24
2.5
0.035
0.045
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
800
270
50
1040
350
65
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 30 V, I D = 16 A,
R G = 25 ?
(Note 4)
--
--
--
--
15
210
60
110
40
430
130
230
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 48 V, I D = 32 A,
V GS = 5 V
(Note 4)
--
--
--
15
3.5
8.5
20
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
32
128
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 32 A
V GS = 0 V, I S = 32 A,
dI F / dt = 100 A/ μ s
--
--
--
--
60
90
1.5
--
--
V
ns
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 400 μ H, I AS = 32A, V DD = 25V, R G = 25 ?, Starting T J = 25°C
3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C
4. Essentially independent of operating temperature
? 2000 Fairchild Semiconductor Corporation
FQB30N06L Rev. C 1
2
www.fairchildsemi.com
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