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参数资料
| 型号： | FQD2N80TM_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 1.8A DPAK |
| 标准包装： | 2,500 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.3 欧姆 @ 900mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
November 2013
FQD2N80
N-Channel QFET ? MOSFET
8 00 V, 1.8 A, 6.3 ?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
? 1.8 A, 8 00 V, R DS(on) = 6.3 ? (Max.) @ V GS = 10 V,
I D = 0.9 A
? Low Gate Charge (Typ. 1 2 nC)
? Low Crss (Typ. 5.5 pF)
? 100% Avalanche Tested
? RoHS Compliant
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD2N80 TM
800
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
1.8
1.14
A
A
I DM
Drain Current
- Pulsed
(Note 1)
7.2
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8 " from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
180
1.8
5.0
4.0
2.5
50
0.4
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (*1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQD2N80TM
2.5
110
50
Unit
o C/W
?200 9 Fairchild Semiconductor Corporation
FQD2N80 Rev. C 1
1
www.fairchildsemi.com
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