参数资料
型号: FQD2N80TM_WS
厂商: Fairchild Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CH 800V 1.8A DPAK
标准包装: 2,500
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 800V
电流 - 连续漏极(Id) @ 25° C: 1.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 6.3 欧姆 @ 900mA,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 10V
输入电容 (Ciss) @ Vds: 550pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
Package Marking and Ordering Information
Part Number
FQD2N80TM
Top Mark
FQD2N80
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 800 V, V GS = 0 V
V DS = 640 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
800
--
--
--
--
--
--
0.9
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
3.0
--
5.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = 10 V, I D = 0.9 A
V DS = 50 V, I D = 0.9 A
--
--
4.9
2.4
6.3
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
425
45
5.5
550
60
7.0
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DD = 400 V, I D = 2.4 A,
R G = 25 ?
( N ote 4 )
--
--
--
--
12
30
25
28
35
70
60
65
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 640 V, I D = 2.4 A,
V GS = 10 V
( Note 4 )
--
--
--
12
2.6
6.0
15
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
1.8
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
7.2
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 1.8 A
V GS = 0 V, I S = 2.4 A,
dI F / dt = 100 A/ μ s
--
--
--
--
480
2.0
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 105 mH, I AS = 1.8 A, V DD = 50 V, R G = 25 ?, s tarting T J = 25°C .
3. I SD ≤ 2.4 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, s tarting T J = 25°C .
4. Essentially independent of operating temperature .
?200 9 Fairchild Semiconductor Corporation
FQD2N80 Rev. C 1
2
www.fairchildsemi.com
相关PDF资料
PDF描述
FQD2P40TM MOSFET P-CH 400V 1.56A DPAK
FQD30N06TM MOSFET N-CH 60V 22.7A DPAK-3
FQD3P50TM_F085 MOSFET P-CH 500V 2.1A DPAK
FQD4N20TF MOSFET N-CH 200V 3A DPAK
FQD5N60CTM_F080 MOSFET N-CH 600V 2.8A DPAK
相关代理商/技术参数
参数描述
FQD2N90 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET
FQD2N90_09 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET
FQD2N90TF 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQD2N90TM 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQD2P25 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V P-Channel MOSFET