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| 型号： | FQH8N100C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 1000V 8A TO-247 |
| 产品目录绘图： | MOSFET TO-247 Pkg |
| 标准包装： | 150 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 1000V（1kV） |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.45 欧姆 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3220pF @ 25V |
| 功率 - 最大： | 225W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
December 2013
FQH8N100C
N-Channel QFET ? MOSFET
10 00 V, 8 .0 A, 1.45 Ω
Description
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
? 8 A, 10 00 V, R DS(on) = 1. 45 ? (Max.) @ V GS = 10 V
? Low Gate Charge (Typ. 53 nC)
? Low Crss (Typ. 1 6 pF)
? Fast Switching
? 100% Avalanche Tested
? Improved dv/dt Capability
? RoHS Compliant
D
G
G
D
S
TO-247
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
Drain-Source Voltage
Parameter
FQH8N100C
1000
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
8.0
5.0
A
A
I DM
Drain Current
- Pulsed
(Note 1)
32
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 " from C ase for 5 S econds .
(Note 2)
(Note 1)
(Note 1)
(Note 3)
850
8.0
22
4.0
225
1.79
-55 to +150
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FQH8N100C
0.56
40
Unit
o C/W
?200 8 Fairchild Semiconductor Corporation
FQH8N100C Rev C 0
1
www.fairchildsemi.com
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