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参数资料
| 型号： | FQI19N20CTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 19A I2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 170 毫欧 @ 9.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 53nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1080pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
November 2013
FQB19N20C
N-Channel QFET ? MOSFET
2 00 V, 1 9 A, 17 0 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
Features
? 1 9.0 A, 2 00 V, R DS(on) = 17 0 mΩ (Max.) @ V GS = 10 V,
I D = 9 . 5 A
? Low Gate Charge (Typ. 40.5 nC)
? Low C rss (Typ. 85 pF)
? 100% Avalanche Tested
? RoHS C ompliant
D
D
G
S
D 2 -PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQB19N20C TM
2 00
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
19.0
12.1
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
76.0
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
433
1 9.0
13.9
5.5
mJ
A
mJ
V/ns
P D
Power Dissipation
Power Dissipation
(T A = 25 ° C) *
(T C = 25 ° C)
- Derate above 25 ° C
3.13
139
1.11
W
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
Thermal Resistance, Junction to Ambient ( * 1 in 2 P ad of 2 - oz C opper), Max.
FQB19N20C TM
0.9
62.5
40
Unit
o C/W
?200 4 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FQI19N20L | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V LOGIC N_Channel MOSFET |
| FQI19N20LTU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQI19N20TU | 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQI1N60 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQI1P50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V P-Channel MOSFET |
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