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参数资料
| 型号： | FQI19N20CTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 19A I2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 170 毫欧 @ 9.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 53nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1080pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FQB19N20C
Device
FQB19N20CTM
Package
D 2 -PAK
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 2 00 V, V GS = 0 V
V DS = 16 0 V, T C = 125 ° C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
2 00
--
--
--
--
--
--
0. 2 4
--
--
--
--
--
--
10
100
100
-100
V
V / ο C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 9 . 5 A
V DS = 40 V, I D = 9 . 5 A
2.0
--
--
--
0. 1 4
10.8
4.0
0. 17
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
830
195
85
1080
255
110
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 0 V, I D = 1 9.0 A
R G = 25 ?
V DS = 16 0 V, I D = 1 9.0 A
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
10
150
135
115
40.5
6.0
22.5
4 0
310
280
2 40
53
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
1 9.0
76.0
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 1 9.0 A
V GS = 0 V, I S = 1 9.0 A
dI F /dt =100 A/ μ s
--
--
--
--
208
1.63
1. 5
--
--
V
ns
μ C
Notes:
1. Repetitive r ating: p ulse - width limited by maximum junction temperature .
2. L = 1.8 mH, I AS = 1 9.0 A, V DD = 50 V, R G = 25 ?, s tarting T J = 25°C .
3. I SD ≤ 1 9.0 A, di/dt ≤ 3 00 A/ μ s, V DD ≤ BV DSS, s tarting T J = 25°C .
4 . Essentially i ndependent of o perating t emperature .
?200 4 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FQI1P50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V P-Channel MOSFET |
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